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  Datasheet File OCR Text:
 2N3904
NPN SMALL SIGNAL TRANSISTOR Features
Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available (2N3906)
E
A B
TO-92 Dim A B C D E G
D
Min 4.32 4.32 12.50 0.36 3.15 2.29 1.14
Max 4.83 4.78 15.62 0.56 3.94 2.79 1.40
Mechanical Data
Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Type Number Weight: 0.18 grams (approx.)
C
H
BOTTOM VIEW
CBE
All Dimensions in mm
H
H G
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25 C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM (Note 1) (Note 1) Pd R
JA
Characteristic
2N3904 60 40 5.0 100 200 500 250 -55 to +150
Unit V V V mA mA mW K/W C
Collector Current - Continuous Collector Current - Peak Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes:
Tj, TSTG
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature. 2. Pulse test: Pulse width 300 s, duty cycle 2%.
Electrical Characteristics
Characteristic
@ TA = 25 C unless otherwise specified Symbol Min 50 70 100 60 30 Max Unit Test Condition -VCE = 1.0V,- IC = 0.1mA -VCE = 1.0V,- IC = 1.0mA -VCE = 1.0V,- IC = 10mA -VCE = 1.0V,- IC = 50mA -VCE = 1.0V,- IC = 100mA V (Note 2) -IC = 10mA,- IB = 1.0mA -IC = 50mA,- IB = 5.0mA (Note 2) -IC = 10mA, -IB = 1.0mA -IC = 50mA, -IB = 5.0mA -VEB = 3.0V, -VCE = 30V -VEB = 3.0V, -VCE = 30V -IC = 10A, -IB = 0 -IC = 1.0mA,- IE = 0 (Note 2) -IE = 10A,- IC = 0 VCE = 20V, -IC = 10mA, -f = 100MHz -VCB = 5.0V, -IE = 0, f = 100kHz -VEB = 0.5V, -IC = 0, f = 100kHz -VCE = 5.0V, -IC = 100 A, RG = 1.0k , -f = 10 to 15000Hz -IB1 = 1.0mA, -IC = 10mA, VCC = 3.0V, VBE(off) = 0.5V -IB1 = 1.0mA,- IC = 10mA, -VCC = 3.0V, -VBE(off) = 0.5V -IB1 =- IB2 = 1.0mA, -IC = 10mA, -VCC = 3.0V -IB1 =- IB2 = 1.0mA, -IC = 10mA, -VCC = 3.0V
DC Current Gain
hFE
300
Collector Saturation Voltage
VCE(SAT)
0.25 0.40 0.85 0.95 50 50 60 40 5.0 250 -- -- -- -- 4.5 10 5.0
Base Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown voltage Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Delay Time Rise Time Storage Time Fall Time
VBE(SAT) ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO fT CCBO CEBO
V nA nA V V V MHz pF pF dB ns ns ns ns
td tr ts tf
35 35 225 75
Notes:
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature. 2. Pulse test: Pulse width 300 s, duty cycle 2%.


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